2
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP41KHR6 MRF6VP41KHSR6
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Impedance, Junction to Case
Pulse:
Case Temperature 80°C, 1000 W Peak, 100
μsec Pulse Width, 20% Duty Cycle,
450 MHz
(3)
ZθJC
0.03
°C/W
Thermal Resistance, Junction to Case
CW:
Case Temperature 84°C, 1000 W CW, 352.2 MHz
RθJC
0.15
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Machine Model (per EIA/JESD22--A115)
A, passes 125 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(4)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
= 300 mA, VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
5
mA
On Characteristics
Gate Threshold Voltage
(4)
(VDS
=10Vdc,ID
= 1600
μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage
(5)
(VDD
=50Vdc,ID
= 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage
(4)
(VGS
=10Vdc,ID
=4Adc)
VDS(on)
?
0.28
?
Vdc
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
3.3
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
147
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
506
?
pF
Functional Tests
(5)
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 1000 W Peak (200 W Avg.), f = 450 MHz,
100
μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
60
64
?
%
Input Return Loss
IRL
?
-- 1 8
-- 9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
(continued)
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